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dc.contributor.authorLin, KungLiangen_US
dc.contributor.authorChang, Edward-Yien_US
dc.contributor.authorLi, Tingkaien_US
dc.contributor.authorHuang, Wei-Chingen_US
dc.contributor.authorHsiao, Yu-Linen_US
dc.contributor.authorTweet, Douglasen_US
dc.contributor.authorMaa, Jer-shenen_US
dc.contributor.authorHsu, Sheng-Tengen_US
dc.date.accessioned2014-12-08T15:01:22Z-
dc.date.available2014-12-08T15:01:22Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-60511-038-7en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/230-
dc.description.abstractGaN film grown on Si substrate with AlN/AlxGa1-xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1-xN film with Al composition varying from 0 similar to 0.66 was used. The correlation of the Al composition in the AlxGa1-xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical omega/2 theta scans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1-xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1-xN buffer layers.en_US
dc.language.isoen_USen_US
dc.titleEffect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Methoden_US
dc.typeProceedings Paperen_US
dc.identifier.journalADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATESen_US
dc.citation.volume1068en_US
dc.citation.spage117en_US
dc.citation.epage122en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000259991900017-
Appears in Collections:Conferences Paper