標題: Low power consumption resistance random access memory with Pt/InOx/TiN structure
作者: Yang, Jyun-Bao
Chang, Ting-Chang
Huang, Jheng-Jie
Chen, Yu-Ting
Tseng, Hsueh-Chih
Chu, Ann-Kuo
Sze, Simon M.
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2-九月-2013
摘要: In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4818672
http://hdl.handle.net/11536/23026
ISSN: 0003-6951
DOI: 10.1063/1.4818672
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 10
結束頁: 
顯示於類別:期刊論文


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