標題: Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
作者: Tsai, Jyun-Yu
Chang, Ting-Chang
Lo, Wen-Hung
Ho, Szu-Han
Chen, Ching-En
Chen, Hua-Mao
Tseng, Tseung-Yuen
Tai, Ya-Hsiang
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 28-Sep-2013
摘要: This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S. S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (V-d). However, our experimental data indicate that S. S. has no evident change under CHCS, but threshold voltage (V-th) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such V-th degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different V-th behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-N-it occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4822158
http://hdl.handle.net/11536/23022
ISSN: 0021-8979
DOI: 10.1063/1.4822158
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 114
Issue: 12
結束頁: 
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