標題: Simulation study of type-II Ge/Si quantum dot for solar cell applications
作者: Hu, Weiguo
Rahman, Mohammad Maksudur
Lee, Ming-Yi
Li, Yiming
Samukawa, Seiji
電機資訊學士班
Undergraduate Honors Program of Electrical Engineering and Computer Science
公開日期: 28-Sep-2013
摘要: The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4821114
http://hdl.handle.net/11536/23021
ISSN: 0021-8979
DOI: 10.1063/1.4821114
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 114
Issue: 12
結束頁: 
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