標題: Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
作者: Liao, Yu-An
Chao, Yi-Kai
Chang, Shu-Wei
Chang, Wen-Hao
Chyi, Jen-Inn
Lin, Shih-Yen
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 30-九月-2013
摘要: We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4824067
http://hdl.handle.net/11536/23019
ISSN: 0003-6951
DOI: 10.1063/1.4824067
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 14
結束頁: 
顯示於類別:期刊論文


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  1. 000325488500117.pdf