標題: High-performance resistive switching characteristics of programmable metallization cell with oxidized Cu-Ti electrodes
作者: Huang, Yu-Chih
Chou, Chia-Hsin
Liao, Chan-Yu
Tsai, Wan-Lin
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 30-九月-2013
摘要: Programmable metallization cell (PMC) memory devices with oxidized Cu-Ti alloy films as the bottom electrodes have been shown to exhibit a superior on/off state current ratio (memory window) of as high as 10(3) and endurance of 3000 cycles as compared to conventional pure copper and unoxidized Cu-Ti alloy electrodes. It was conjectured that the Cu-Ti alloy electrodes could obtain the appropriate amount of copper atoms to format and rupture the conductive filaments in the resistive switching layer. Furthermore, the oxidized Cu-Ti alloys could control the Cu cations from the Cu and Cu2O to the appropriate amountto achieve the most favorable PMC characteristics. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4823818
http://hdl.handle.net/11536/23018
ISSN: 0003-6951
DOI: 10.1063/1.4823818
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 14
結束頁: 
顯示於類別:期刊論文


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  1. 000325488500078.pdf