標題: Self-Assembled Monolayer-Based Selective Modification on Polysilicon Nanobelt Devices
作者: Liu, Hao Heng
Lin, Tzung Han
Sheu, Jeng-Tzong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: polysilicon nanobelts;localized Joule heating;self-assembled monolayer;selective modification
公開日期: 1-十月-2013
摘要: In this study, a self-assembled monolayer (SAM) of methoxy-poly (ethylene-glycol)-silane (mPEG-sil) was used to modify the silicon dioxide surface of polysilicon nanodevices (PNDs) to act as a passivation layer that inhibits nonspecific binding of proteins and reduces localized Joule heating power. Selective modifications of 3-aminopropyltrimethoxysilane (APTMS), NHS-biotin and dye-labeled Streptavidin on the removal regions were characterized. These PNDs, which consist of a two-level doping profile, were designed to confine heat in the low-level doping region during localized Joule heating. Localized Joule heating with pulse bias was examined in both vacuum and ambient, which indicated the removal region was longer in vacuum for the same pulse bias. Moreover, a comparison of selectively and nonselectively modified PNDs observed in time-lapsed fluorescence detection of dye-labeled Streptavidin showed a higher increasing rate in fluorescence intensity (similar to 2x enhancement) in the selectively modified PNDs. Finally, a COMSOL simulation was employed to evaluate the temperature distribution in the PNDs, with results showing that heat confinement was observed in the low-level doping region and a temperature very close to 673 K was achieved while applying a pulse voltage (40 V, 5 mu s) to remove mPEG-sil.
URI: http://dx.doi.org/10.1021/am402586q
http://hdl.handle.net/11536/22999
ISSN: 1944-8244
DOI: 10.1021/am402586q
期刊: ACS APPLIED MATERIALS & INTERFACES
Volume: 5
Issue: 20
起始頁: 10048
結束頁: 10053
顯示於類別:期刊論文


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