標題: Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
作者: Wong, Yuen-Yee
Chen, Yu-Kong
Maa, Jer-Shen
Yu, Hung-Wei
Tu, Yung-Yi
Dee, Chang-Fu
Yap, Chi-Chin
Chang, Edward Yi
材料科學與工程學系
照明與能源光電研究所
電子工程學系及電子研究所
Department of Materials Science and Engineering
Institute of Lighting and Energy Photonics
Department of Electronics Engineering and Institute of Electronics
公開日期: 7-十月-2013
摘要: Ti/Al/Ni/Cu ohmic contact for AlGaN/GaN structure has been fabricated. The Ni layer played an important role in achieving low specific contact resistance (r(c)), smooth morphology, and excellent edge acuity. With a 50-angstrom Ni layer, a r(c) of 1.35 x 10(-6) Omega-cm(2) and a root-mean-square roughness of 7.65 nm have been realized. The characterization results indicated that no evidence of Cu diffusion into the semiconductor layers. The formation of Al-Cu and Ti-Cu alloys might have confined the Cu within the ohmic metal. In the absence of gold, the surface roughening caused by Au-Al alloy in conventional Ti/Al/Ni/Au structure was also prevented. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4824894
http://hdl.handle.net/11536/22988
ISSN: 0003-6951
DOI: 10.1063/1.4824894
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 15
結束頁: 
顯示於類別:期刊論文


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