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dc.contributor.authorLi, Liang-Chenen_US
dc.contributor.authorHuang, Kuo-Hsunen_US
dc.contributor.authorWei, Jia-Anen_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.contributor.authorLiu, Ting-Weien_US
dc.contributor.authorChen, Chia-Chunen_US
dc.contributor.authorChen, Li-Chyongen_US
dc.contributor.authorChen, Kuei-Hsienen_US
dc.date.accessioned2014-12-08T15:32:57Z-
dc.date.available2014-12-08T15:32:57Z-
dc.date.issued2011-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.06GF21en_US
dc.identifier.urihttp://hdl.handle.net/11536/22979-
dc.description.abstractWe report the properties of low-frequency contact noise of multielectrode GaN nanowire (NW) devices. A two-port cross-spectrum technique is used to discriminate the noise of the ohmic contact from that of the NW section. The diameter of the GaN NW is around 100 nm. The Ti/Al electrodes of the NWs are defined by e-beam lithography. The typical resistance of a NW section with a length of 800nm is about 5.5 k Omega and the two-wire resistance is below 100 k Omega. The results show that the low-frequency excess noise of the GaN NW is much smaller than that of the current-flowing contact, indicating that the contact noise dominates the noise behavior in our GaN NW devices. A careful study of the noise amplitude (A) of the 1/f noise of different types of NW and carbon nanotube devices, both in our work and in the literature, yields an empirical formula for estimating A from the two-wire resistance of the device. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleLow-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.06GF21en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000291748900053-
dc.citation.woscount0-
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