標題: Characteristics of hafnium oxide resistance random access memory with different setting compliance current
作者: Su, Yu-Ting
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Zhang, Rui
Lou, J. C.
Chen, Jung-Hui
Young, Tai-Fa
Chen, Kai-Huang
Tseng, Bae-Heng
Shih, Chih-Cheng
Yang, Ya-Liang
Chen, Min-Chen
Chu, Tian-Jian
Pan, Chih-Hung
Syu, Yong-En
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 14-十月-2013
摘要: In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4825104
http://hdl.handle.net/11536/22978
ISSN: 0003-6951
DOI: 10.1063/1.4825104
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 16
結束頁: 
顯示於類別:期刊論文


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  1. 000326148700085.pdf