標題: Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded ZnO thin film
作者: Kuo, Kuang-Yang
Liu, Chuan-Cheng
Huang, Pin-Ruei
Hsu, Shu-Wei
Chuang, Wen-Ling
Chen, You-Jheng
Lee, Po-Tsung
光電工程學系
Department of Photonics
關鍵字: Si quantum dot;ZnO thin film;Transport mechanism
公開日期: 23-十月-2013
摘要: A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700A degrees C exhibits not only high optical transmittance in the long-wavelength range but also better electrical properties including low resistivity, small turn-on voltage, and high rectification ratio. By using ZnO as the QDs' matrix, the carrier transport is dominated by the multistep tunneling mechanism, the same as in a n-ZnO/p-Si heterojunction diode, which clearly differs from that using the traditional matrix materials. Hence, the carriers transport mainly in the ZnO matrix, not through the Si QDs. The unusual transport mechanism using ZnO as matrix promises the great potential for optoelectronic devices integrating Si QDs.
URI: http://dx.doi.org/10.1186/1556-276X-8-439
http://hdl.handle.net/11536/22970
ISSN: 1931-7573
DOI: 10.1186/1556-276X-8-439
期刊: NANOSCALE RESEARCH LETTERS
Volume: 8
Issue: 
結束頁: 
顯示於類別:期刊論文


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