標題: Statistical Model and Rapid Prediction of RRAM SET Speed-Disturb Dilemma
作者: Luo, Wun-Cheng
Liu, Jen-Chieh
Lin, Yen-Chuan
Lo, Chun-Li
Huang, Jiun-Jia
Lin, Kuan-Liang
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Disturb;ramp voltage stress (RVS);resistive-switching random access memory (RRAM);SET speed;SET statistics
公開日期: 1-Nov-2013
摘要: A comprehensive study of SET speed-disturb dilemma in resistive-switching random access memory (RRAM) is presented using statistically based prediction methodologies, accounting for the stochastic nature of SET. An analytical percolation model has been successful in explaining the statistical Weibull distribution of SET time and SET voltage in addition to the power-law voltage-time dependence. Two prediction methodologies using constant voltage stress (CVS) and ramp voltage stress (RVS) are proposed to evaluate the SET speed-disturb properties. The RVS method reduces analysis time and cost and yields equivalent results as the CVS method. Furthermore, the RVS method is used to evaluate the device design space and the current status of RRAM technology to meet the strict requirement of the SET speed-disturb dilemma.
URI: http://dx.doi.org/10.1109/TED.2013.2281991
http://hdl.handle.net/11536/22943
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2281991
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 11
起始頁: 3760
結束頁: 3766
Appears in Collections:Articles


Files in This Item:

  1. 000326263200022.pdf