標題: Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition
作者: Fu, S. F.
Chen, C. Y.
Li, F. W.
Hsu, C. H.
Chou, W. C.
Chang, W. H.
Chen, W. K.
Ke, W. C.
電子物理學系
Department of Electrophysics
關鍵字: X-ray diffraction;Metal-organic vapor phase epitaxy;Nitrides;Semiconducting indium compounds
公開日期: 15-十一月-2013
摘要: Good-optical-quality, thick InxGa1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was Found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 degrees C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808 +/- 6 nm and 229 +/- 18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 degrees C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 degrees C, indicative of the occurrence of parasitic reactions in the gas phase. (C) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2013.07.030
http://hdl.handle.net/11536/22929
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2013.07.030
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 383
Issue: 
起始頁: 106
結束頁: 111
顯示於類別:期刊論文


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