標題: Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
作者: Ho, Szu-Han
Chang, Ting-Chang
Wu, Chi-Wei
Lo, Wen-Hung
Chen, Ching-En
Tsai, Jyun-Yu
Chen, Hua-Mao
Liu, Guan-Ru
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Chen, Daniel
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 2013
摘要: In this study, the authors investigated an anomalous gate current hump after dynamic negative bias stress (NBS) and negative-bias temperature-instability (NBTI) in HfxZr1-xO2 and HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. This result is attributed to hole trapping in high-k bulk. Measuring gate current under initial through body floating and source/drain floating conditions indicates that holes flow from source/drain to gate. The fitting of the gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction under initial. Next, fitting the gate current after dynamic NBS and NBTI indicates Frenkel-Poole then tunneling mechanisms, finally returning to the Frenkel-Poole mechanism. These phenomena can be attributed to hole trapping in high-k bulk and the formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). To further understand the gate current hump, both Zr-undoped and 8 similar to 10% Zr-doped in high-k bulk devices were used for comparisons. These results indicate that initial gate current is also a significant factor in generating the anomalous gate current hump, and all results obey the hump generation condition of J(Tunneling) << J(Frenkel-Poole). (C) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22910
http://dx.doi.org/10.1149/2.027309jss
ISSN: 2162-8769
DOI: 10.1149/2.027309jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 2
Issue: 9
起始頁: Q187
結束頁: Q191
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