標題: The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing
作者: Kao, CH
Lai, CS
Lee, CL
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1997
摘要: A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm(2)). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.
URI: http://dx.doi.org/10.1109/55.641434
http://hdl.handle.net/11536/229
ISSN: 0741-3106
DOI: 10.1109/55.641434
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 18
Issue: 11
起始頁: 526
結束頁: 528
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YD00300007.pdf