標題: Investigation of Random Telegraph Signal with PD SOI MOSFETs
作者: Chen, Ching-En
Chang, Ting-Chang
Lo, Hung-Ping
Ho, Szu-Han
Lo, Wen-Hung
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: A novel method, called random telegraphy signal (RTS), was constructed to characterize the gate oxide quality and reliability of metal-oxide-semiconductor field-effect-transistors (MOSFETs). With the aggressive scaling of device size, drain current RTS (I-D-RTS) become a critical role in carrier transport of MOSFETs. Besides, RTS in gate leakage current (I-G-RTS) was denoted as the other new method to understand property of gate oxide. Recently, the study of RTS has also been made in MOSFETs with metal gate and high dielectric constant (metal gate/high-k). However, the RTS in partial depleted silicon-on-insulator MOSFETs (PD SOI MOSFETs) has not comprehensively been studied yet. This paper investigates RTS characteristics in PD SOI MOSFETs.
URI: http://hdl.handle.net/11536/22894
http://dx.doi.org/10.1149/1.3700891
ISBN: 978-1-60768-313-1
ISSN: 1938-5862
DOI: 10.1149/1.3700891
期刊: DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES
Volume: 45
Issue: 3
起始頁: 261
結束頁: 271
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000325405800026.pdf