標題: Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment
作者: Chang, Kow-Ming
Chang, Ting-Chia
Chang, Po-Chun
Huang, Bo-Wen
Wu, Chien-Hung
Deng, I-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: HfO2 is considered a promising gate dielectric material for sub-45 nm CMOS technology. It has been reported that incorporate Al into HfO2 forming Hf aluminates in order to increase the crystallization temperature. However, the growth of the low-k interfacial layer at high-k/Si interface during high-k dielectric deposition would result in reliability degradation. Recently, incorporating nitrogen into HfAlOx gate dielectrics has beneficial effect on reliability performance. In addition, fluorine incorporation into high-k dielectrics also could have several improvements. In this study, dual plasma (CF4 pre-treatment and N-2 post-treatment) was performed on HfAlOx MIS capacitor in order to improve interface quality and the reliability properties. According to our experimental results, dual plasma treatment could improve interface quality and enhance reliability properties of HfAlOx thin films.
URI: http://hdl.handle.net/11536/22893
http://dx.doi.org/10.1149/1.3700883
ISBN: 978-1-60768-313-1
ISSN: 1938-5862
DOI: 10.1149/1.3700883
期刊: DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES
Volume: 45
Issue: 3
起始頁: 167
結束頁: 174
Appears in Collections:Conferences Paper


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