Title: Optical Mode Modulation of AlGaInP Multi Quantum Well Laser Diodes
Authors: Hung, Chih-Tsang
Huang, Shen-Che
Lu, Tien-Chang
光電工程學系
Department of Photonics
Keywords: AlGaInP;laser diodes;quantum-well lasers;dielectric layer;mode modulation
Issue Date: 2013
Abstract: We investigate the influence of passivation structure on the optical mode distribution and LI characteristics for the edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si3N4 or SiO2 passivation designs, the modification of dielectric layer thickness can determinate the lateral near-field confinement and change the horizontal far-field (FF) divergence. By increasing the film thickness, the non-radiation absorption come from Au-Ti can be improved and it leads to a narrow FF divergence beam. As continue to increasing the thickness, thicker passivation provides a better confinement factor and then the far-field pattern turn to be wider. For LI characteristics, it is necessary to deposit a thick enough passivation to reduce metal absorption. However, it cause much thermal energy accumulated in the ridge waveguide and deteriorate the quantum efficiency as adopting a too thick dielectric layer. Finally, we demonstrate a high power AlGaInP-GaInP multi quantum wells (MQWs) LD adopted a high-reflectivity passivation to enhance the LI characteristics and keep a suitable far-field divergence angle simultaneously. Under the design of three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive Al2O3/Ta2O5 multilayer. The measured room-temperature threshold current (I-th) and characteristic temperature (T-0) can be arrived 44.5mA and 104.2K at 16.4 degrees far-fielddivergence.
URI: http://hdl.handle.net/11536/22863
http://dx.doi.org/10.1117/12.2024042
ISBN: 978-0-8194-9666-9
ISSN: 0277-786X
DOI: 10.1117/12.2024042
Journal: NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES X
Volume: 8816
Appears in Collections:Conferences Paper


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