標題: Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel Length
作者: Lin, Horng-Chih
Lyu, Rong-Jhe
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Metal oxide;shadow mask;submicrometer;thin-film transistors;ZnO
公開日期: 1-九月-2013
摘要: A method was developed to fabricate ZnO thin-film transistors (TFTs) with submicrometer channel length. In this scheme, mature process techniques are used to form a suspending hardmask bridge on the wafer surface, which enables the subsequent construction of a TFT by the sequential deposition of gate oxide, ZnO channel layer, and Al source/drain contacts. Excellent electrical characteristics were demonstrated by the fabricated ZnO TFTs that show high ON/OFF current ratio (>10(9)), low subthreshold swing (89 mV/decade), and high field-effect mobility (41 cm(2)/V s). Very small variation in the device characteristics is also demonstrated.
URI: http://dx.doi.org/10.1109/LED.2013.2274263
http://hdl.handle.net/11536/22785
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2274263
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 9
起始頁: 1160
結束頁: 1162
顯示於類別:期刊論文


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  1. 000323982500029.pdf