Title: Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application
Authors: Fuh, Chur-Shyang
Liu, Po-Tsun
Teng, Li-Feng
Huang, Sih-Wei
Lee, Yao-Jen
Shieh, Han-Ping D.
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
Keywords: Flexible thin-film transistor (TFT);In-Ga-Zn-O thin-film transistor (IGZO TFT);postannealing
Issue Date: 1-Sep-2013
Abstract: In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as a carrier mobility of 4.21 cm(2)/V s and threshold voltage of 2.91 V. The performance of microwave-treated a-IGZO: N TFT with annealing process duration of 300 s is well competitive with its counterpart treated by thermal furnace annealing at 350 C for 1 h. Owing to its low thermal budget and selective heating to materials of interest, the microwave annealing has great potential for flexible oxide TFT applications.
URI: http://dx.doi.org/10.1109/LED.2013.2272311
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2272311
Volume: 34
Issue: 9
Begin Page: 1157
End Page: 1159
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