|Title:||Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application|
Shieh, Han-Ping D.
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
|Keywords:||Flexible thin-film transistor (TFT);In-Ga-Zn-O thin-film transistor (IGZO TFT);postannealing|
|Abstract:||In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as a carrier mobility of 4.21 cm(2)/V s and threshold voltage of 2.91 V. The performance of microwave-treated a-IGZO: N TFT with annealing process duration of 300 s is well competitive with its counterpart treated by thermal furnace annealing at 350 C for 1 h. Owing to its low thermal budget and selective heating to materials of interest, the microwave annealing has great potential for flexible oxide TFT applications.|
|Journal:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|
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