Title: Electrical Performance Enhancement of AlZn-SnO Thin Film Transistor by Supercritical Fluid Treatment
Authors: Teng, Li-Feng
Liu, Po-Tsun
Wang, Wei-Ya
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
Keywords: Al-Zn-Sn-O thin film transistor (Al-Zn-Sn-O TFT);supercritical fluid (SCF);transparent amorphous oxide semiconductor (TAOS)
Issue Date: 1-Sep-2013
Abstract: In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics.
URI: http://dx.doi.org/10.1109/LED.2013.2272117
http://hdl.handle.net/11536/22783
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2272117
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 9
Begin Page: 1154
End Page: 1156
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