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dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorChen, Bo-Yuanen_US
dc.contributor.authorChiu, Chia-Sungen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorChen, Chun-Haoen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.contributor.authorChen, Ming-Yien_US
dc.contributor.authorYang, Yu-Chien_US
dc.contributor.authorJaw, Brendaen_US
dc.contributor.authorWang, Kai-Lien_US
dc.date.accessioned2014-12-08T15:32:31Z-
dc.date.available2014-12-08T15:32:31Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2272937en_US
dc.identifier.urihttp://hdl.handle.net/11536/22782-
dc.description.abstractIn this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones.en_US
dc.language.isoen_USen_US
dc.subjectDrain contacten_US
dc.subjectlaterally diffused metal-oxide-semiconductor (LDMOS)en_US
dc.subjectmultifinger layouten_US
dc.subjectresistanceen_US
dc.subjectRF transistoren_US
dc.titlePerformance Improvement in RF LDMOS Transistors Using Wider Drain Contacten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2272937en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue9en_US
dc.citation.spage1085en_US
dc.citation.epage1087en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000323982500004-
dc.citation.woscount2-
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