標題: Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact
作者: Chen, Kun-Ming
Chen, Bo-Yuan
Chiu, Chia-Sung
Huang, Guo-Wei
Chen, Chun-Hao
Lin, Horng-Chih
Huang, Tiao-Yuan
Chen, Ming-Yi
Yang, Yu-Chi
Jaw, Brenda
Wang, Kai-Li
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Drain contact;laterally diffused metal-oxide-semiconductor (LDMOS);multifinger layout;resistance;RF transistor
公開日期: 1-Sep-2013
摘要: In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones.
URI: http://dx.doi.org/10.1109/LED.2013.2272937
http://hdl.handle.net/11536/22782
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2272937
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 9
起始頁: 1085
結束頁: 1087
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