標題: ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET
作者: CHANG, CY
LIN, CY
CHOU, JW
HSU, CCH
PAN, HT
KO, J
電控工程研究所
奈米中心
Institute of Electrical and Control Engineering
Nano Facility Center
公開日期: 1-Nov-1994
摘要: The boron-penetration-dependent Reverse Short Channel Effect (RSCE) on the threshold voltage is observed for short channel p+ poly-gate PMOSFET's. The RSCE is found to be more significant as the boron penetration becomes more severe. The RSCE is significant in BF2 doped poly-gated MOS devices and is alleviated in buffered poly-gated MOS devices. Fluorine enhanced boron diffusion in the gate oxide during high temperature process is believed to account for the RSCE, which is also confirmed by using a two-dimensional process simulator.
URI: http://dx.doi.org/10.1109/55.334659
http://hdl.handle.net/11536/2277
ISSN: 0741-3106
DOI: 10.1109/55.334659
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 15
Issue: 11
起始頁: 437
結束頁: 439
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  1. A1994PT32600001.pdf