標題: 1/f noise in micrometer-sized ultrathin indium tin oxide films
作者: Yeh, Sheng-Shiuan
Hsu, Wei-Ming
Lee, Jui-Kan
Lee, Yao-Jen
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 16-九月-2013
摘要: We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1/f law in the frequency range f approximate to 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4821938
http://hdl.handle.net/11536/22753
ISSN: 0003-6951
DOI: 10.1063/1.4821938
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 12
結束頁: 
顯示於類別:期刊論文


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  1. 000324826000070.pdf