標題: Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material
作者: Cheng, Yi-Lung
Huang, Jun-Fu
Chang, Yu-Min
Leu, Jihperng
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Low-k dielectric;H-2/He;Plasma;Remote plasma;Reliability;Breakdown
公開日期: 1-Oct-2013
摘要: Low dielectric constant (low-k) porous films are needed for advanced technologies to improve signal propagation. The integration of porous low-k films faces more severe challenges due to the presence of porosity. Plasma treatments have been considered to be critical steps to impact the low-k films' properties. In this study, the effect of various H-2/He plasma treatments on the porous low-k dielectrics deposited by plasma enhanced chemical vapor deposition was investigated. All the plasma treatments resulted in the formation of a thin and dense layer on the surface of the porous low-k films. Additionally, the properties of this top dense layer are modified and changed for the standard H-2/He plasma treatment, leading to a degraded electrical and reliability performance. However, H-2/He plasma-treated low-k dielectric by the remote plasma method shows a better electrical and reliability performance. As a result, the remote plasma treatment on the porous low-k dielectrics appears to be a promising method in the future interlayer dielectrics application. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.12.074
http://hdl.handle.net/11536/22733
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.12.074
期刊: THIN SOLID FILMS
Volume: 544
Issue: 
起始頁: 537
結束頁: 540
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