標題: Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors
作者: Lai, Ming-Hui
Wu, YewChung Sermon
Huang, Jung-Jie
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Metal-induced crystallization (MIC);Thin film transistors (TFTs);Poly-Si;Ni concentration;Source/drain resistance
公開日期: 1-Oct-2013
摘要: The Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Most studies have focused only on reducing Ni contamination because Ni residues cause high leakage current in MIC-TFTs. Also of concern is the source/drain (S/D) series resistance, which degrades the device performance (driving ability) that might vary with the Ni concentration in MIC-TFTs. Improving the driving ability of MIC-TFTs requires a detailed understanding of how Ni residues affect S/D series resistance. This study investigates how Ni concentration affects S/D series resistance by using the transmission line method. The results of this study provide further insight into how Ni concentration and resistance are related. The results show that the S/D series resistance and channel resistance decreased with a reduction in Ni concentration in MIC poly-Si because of better crystalline quality and lower degradation of the donor concentration. This phenomenon was caused by the Ni concentration forming less NiSi2 nucleation sites to generate a large grain size; Ni atoms serve as acceptor-like dopants in silicon, which counteract with the effects of n-type doping, subsequently reducing the donor concentration in the S/D region. (C) 2013 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2013.01.042
http://hdl.handle.net/11536/22732
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.01.042
期刊: THIN SOLID FILMS
Volume: 544
Issue: 
起始頁: 500
結束頁: 503
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