標題: Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
作者: Tsai, Yu-Lin
Lin, Chien-Chung
Han, Hau-Vei
Chang, Chun-Kai
Chen, Hsin-Chu
Chen, Kuo-Ju
Lai, Wei-Chi
Sheu, Jin-Kong
Lai, Fang-I
Yu, Peichen
Kuo, Hao-Chung
光電系統研究所
光電工程學系
Institute of Photonic System
Department of Photonics
關鍵字: InGaN multiple quantum well solar cells;Quantum dots;Luminescent down shifting;Anti-reflection
公開日期: 1-十月-2013
摘要: This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs. (C) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solmat.2013.07.004
http://hdl.handle.net/11536/22711
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2013.07.004
期刊: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 117
Issue: 
起始頁: 531
結束頁: 536
顯示於類別:期刊論文


文件中的檔案:

  1. 000325188400081.pdf