標題: A look into the origin of shunt leakage current of Cu(In,Ga)Se-2 solar cells via experimental and simulation methods
作者: Liao, Yu-Kuang
Kuo, Shou-Yi
Hsieh, Ming-Yang
Lai, Fang-I
Kao, Ming-Hsuan
Cheng, Shun-Jen
Chiou, Ding-Wen
Hsieh, Tung-Po
Kuo, Hao-Chung
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: CIGS;Space-charged limited current;Dark current;Shunt leakage;APSYS;Temperature dependence IV
公開日期: 1-十月-2013
摘要: This study investigates how to apply space-charge-limited (SCL) current to describe shunt leakage current in a CIGS solar cell. Possible factors inducing SCL current have been observed through conductive atomic force microscopy (C-AFM), which supports the SCL current theory, describing the shunt current of a CIGS solar cell. In simulations derived from experimental data, deviation of dark IV curves is due to flaws in the real device. These flaws are absent in simulation, but investigation verifies the characteristics of SCL current component's experimental IV curves within shunt leakage current. A device with a metal/CIGS/metal structure could simulate SCL current and confirm its characteristics. Such a simulated structure, representing flaws inserted into a CIGS solar cell, generates the same dark-current behavior revealed in experimental dark IV curves. This study investigates the response of dark current to varying sizes of the flaw within the CIGS solar cell. (C) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solmat.2013.05.031
http://hdl.handle.net/11536/22710
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2013.05.031
期刊: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 117
Issue: 
起始頁: 145
結束頁: 151
顯示於類別:期刊論文


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  1. 000325188400023.pdf