標題: Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET
作者: Hu, Vita Pi-Ho
Fan, Ming-Long
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Band-to-band tunneling (BTBT) leakage;FinFET;germanium;germanium-on-insulator (GeOI)
公開日期: 1-Oct-2013
摘要: We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET. Device and circuit designs to mitigate the amplified BTBT leakage of GeOI FinFETs are suggested. The effectiveness of various high threshold voltage technology options including increasing channel doping, increasing gate length and drain-side underlap for leakage reduction is analyzed.
URI: http://dx.doi.org/10.1109/TED.2013.2278032
http://hdl.handle.net/11536/22704
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2278032
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 10
起始頁: 3596
結束頁: 3600
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