標題: High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique
作者: Liu, Sheng-Hsien
Yang, Wen-Luh
Lin, Yu-Hsien
Wu, Chi-Chang
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Double-layer metal nanocrystal;ion bombardment (IB);nickel;nonvolatile memory (NVM)
公開日期: 1-十月-2013
摘要: A novel ion bombardment (IB) technique is presented to fabricate and embed double-layer (DL) Ni nanocrystal (NC) in silicon nitride for TaN/Al2O3/Si3N4/SiO2/Si nonvolatile memory applications. In contrast to other methods of forming DL metal NC, the IB technique is a relatively simple fabrication method and completely compatible with the current IC manufacturing technologies. Using the IB technique, a high-quality ultrathin interlayer between top and bottom layered NCs can be easily formed and controlled. Compared with the control sample, the IB-induced DL Ni NC memory exhibits superior performance in terms of faster program and erase (P/E) speeds, longer data retention, better endurance, negligible program disturbance, and great potential for a multilevel operation. In addition, the IB-induced DL Ni NC device also shows higher P/E efficiency as well as similar excellent reliability by comparison with other conventional DL metal NC memories due to the high-quality ultrathin interlayer.
URI: http://dx.doi.org/10.1109/TED.2013.2279156
http://hdl.handle.net/11536/22700
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2279156
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 10
起始頁: 3393
結束頁: 3399
顯示於類別:期刊論文


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