標題: Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks
作者: Lee, Yao-Jen
Tsai, Bo-An
Lai, Chiung-Hui
Chen, Zheng-Yao
Hsueh, Fu-Kuo
Sung, Po-Jung
Current, Michael I.
Luo, Chih-Wei
電子物理學系
Department of Electrophysics
關鍵字: High-k;low temperature;metal gate;microwave annealing (MWA)
公開日期: 1-十月-2013
摘要: In this letter, low-temperature (480 degrees C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO2, and TaN/HfO2, after different annealing methods are discussed. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated using low temperature MWA. In addition, the short channel effects in nMOSFETs annealed by MWA can be also improved because of the suppression of dopant diffusion and stabilization of EOT.
URI: http://dx.doi.org/10.1109/LED.2013.2279396
http://hdl.handle.net/11536/22691
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2279396
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 10
起始頁: 1286
結束頁: 1288
顯示於類別:期刊論文


文件中的檔案:

  1. 000325186600027.pdf