Title: Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks
Authors: Lee, Yao-Jen
Tsai, Bo-An
Lai, Chiung-Hui
Chen, Zheng-Yao
Hsueh, Fu-Kuo
Sung, Po-Jung
Current, Michael I.
Luo, Chih-Wei
Department of Electrophysics
Keywords: High-k;low temperature;metal gate;microwave annealing (MWA)
Issue Date: 1-Oct-2013
Abstract: In this letter, low-temperature (480 degrees C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO2, and TaN/HfO2, after different annealing methods are discussed. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated using low temperature MWA. In addition, the short channel effects in nMOSFETs annealed by MWA can be also improved because of the suppression of dopant diffusion and stabilization of EOT.
URI: http://dx.doi.org/10.1109/LED.2013.2279396
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2279396
Volume: 34
Issue: 10
Begin Page: 1286
End Page: 1288
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