標題: High-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike Doping
作者: Liao, Chun-Hung
Li, Chang-Hung
Zan, Hsiao-Wen
Meng, Hsin-Fei
Tsai, Chuang-Chuang
光電工程學系
Department of Photonics
關鍵字: a-IGZO thin-film transistor (TFT);dot doping;double gate;dual gate (DG);oxide thin-film transistor
公開日期: 1-十月-2013
摘要: In this letter, we use a dual-gate (DG) structure together with nanometer dotlike doping (NDD) in active channel to produce a-IGZO thin-film transistors with very high current drive. With DG operation, the output current increases from 0.14 mA of the conventional device to 0.76 mA of the NDD device. The enhanced lateral field and improved carrier accumulation in DG operation may explain the significantly enlarged drive current. Particularly, simulated electron distribution reveals that high carrier concentration is induced under NDD regions in DG operation. The device without NDD, however, does not exhibit improved drive current in DG operation.
URI: http://dx.doi.org/10.1109/LED.2013.2278393
http://hdl.handle.net/11536/22689
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2278393
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 10
起始頁: 1274
結束頁: 1276
顯示於類別:期刊論文


文件中的檔案:

  1. 000325186600023.pdf