標題: Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer
作者: Pan, Tung-Ming
Yen, Li-Chen
Mondal, Somnath
Lo, Chieh-Ting
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
公開日期: 2013
摘要: In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of similar to 15%, and a better endurance performance for P/E cycles up to 10(5). (c) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22628
http://dx.doi.org/10.1149/2.002310ssl
ISSN: 2162-8742
DOI: 10.1149/2.002310ssl
期刊: ECS SOLID STATE LETTERS
Volume: 2
Issue: 10
起始頁: P83
結束頁: P85
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