Title: Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
Authors: Chao, Chu-Li
Xuan, Rong
Yen, Hsi-Hsuan
Chiu, Ching-Hsueh
Fang, Yen-Hsiang
Li, Zhen-Yu
Chen, Bo-Chun
Lin, Chien-Chung
Chiu, Ching-Hua
Guo, Yih-Der
Kuo, Hao-Chung
Chen, Jenn-Fang
Cheng, Shun-Jen
光電系統研究所
電子物理學系
光電工程學系
Institute of Photonic System
Department of Electrophysics
Department of Photonics
Keywords: Droop;freestanding GaN (FS-GaN);homoepitaxially;light-emitting diodes (LEDs)
Issue Date: 15-Jun-2011
Abstract: Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture a freestanding GaN (FS-GaN) substrate with threading dislocation densities down to similar to 10(7) cm(-2). In this letter, we report InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on this FS-GaN substrate. The defect densities in the homoepitaxially grown LEDs were substantially reduced, leading to improved light emission efficiency. Compared with the LED grown on sapphire, we obtained a lower forward voltage, smaller diode ideality factor, and higher light-output power in the same structure grown on FS-GaN. The external quantum efficiency (EQE) of LEDs grown on FS-GaN were improved especially at high injection current, which brought the efficiency droop phenomenon greatly reduced at high current density.
URI: http://dx.doi.org/10.1109/LPT.2011.2134081
http://hdl.handle.net/11536/22617
ISSN: 1041-1135
DOI: 10.1109/LPT.2011.2134081
Journal: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 23
Issue: 12
Begin Page: 798
End Page: 800
Appears in Collections:Articles


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