標題: Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors
作者: Chu, Min-Ching
Meena, Jagan Singh
Liu, Po-Tsun
Shieh, Han-Ping D.
You, Hsin-Chiang
Tu, Yen-Wei
Chang, Feng-Chih
Ko, Fu-Hsiang
材料科學與工程學系
光電工程學系
顯示科技研究所
Department of Materials Science and Engineering
Department of Photonics
Institute of Display
公開日期: 1-Jul-2013
摘要: A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O-2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasma-surface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O-2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.6.076501
http://hdl.handle.net/11536/22610
ISSN: 1882-0778
DOI: 10.7567/APEX.6.076501
期刊: APPLIED PHYSICS EXPRESS
Volume: 6
Issue: 7
結束頁: 
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