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dc.contributor.authorWu, Tzeng-Tsongen_US
dc.contributor.authorChen, Chih-Chengen_US
dc.contributor.authorChen, Hao-Wenen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorKuo, Cheng-Huangen_US
dc.date.accessioned2014-12-08T15:32:05Z-
dc.date.available2014-12-08T15:32:05Z-
dc.date.issued2013-07-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2013.2247570en_US
dc.identifier.urihttp://hdl.handle.net/11536/22605-
dc.description.abstractIn this paper, GaN quasi-periodic nanopillars were fabricated and investigated. The quasi-periodic nanopillars were realized by nanoimprint technique and selective area growth. Localized lasing mode was identified in the GaN quasi-periodic nanopillars. The threshold energy density and lasing wavelength were 40 mJ/cm(2) and 369 nm, respectively. The divergence angle and near-field lasing spot were measured to be 10.5 degrees and 3.6 mu m, respectively. The spontaneous emission coupling factor of localized lasing mode was estimated to be 9.4 x 10(-3). The mode patterns in the real and reciprocal spaces were calculated by the multiple scattering method to confirm the mode localization behavior.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectmode localizationen_US
dc.subjectnanopillaren_US
dc.titleLocalized Lasing Mode in GaN Quasi-Periodic Nanopillars at Room Temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2013.2247570en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume19en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000322719600084-
dc.citation.woscount0-
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