Title: Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel
Authors: Chen, Hung-Bin
Chang, Chun-Yen
Lu, Nan-Heng
Wu, Jia-Jiun
Han, Ming-Hung
Cheng, Ya-Chi
Wu, Yung-Chun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Gate-all-around (GAA);junctionless (JL);thin-film transistor;ultrathin channel
Issue Date: 1-Jul-2013
Abstract: This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10(8) because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.
URI: http://dx.doi.org/10.1109/LED.2013.2262018
http://hdl.handle.net/11536/22604
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2262018
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 7
Begin Page: 897
End Page: 899
Appears in Collections:Articles


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