標題: Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying Characteristics
作者: Hsu, Chung-Wei
Hou, Tuo-Hung
Chen, Mei-Chin
Wang, I-Ting
Lo, Chun-Li
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 3-D memory;crossbar array;resistive-switching memory (RRAM);self-rectification
公開日期: 1-Jul-2013
摘要: To be compatible with 3-D vertical crossbar arrays, a TiO2/HfO2 bilayer resistive-switching memory (RRAM) cell sandwiched between Ni electrodes is developed. The proposed device has numerous highly desired features for the implementation of 3-D vertical RRAM, including: 1) stable bipolar resistive switching; 2) forming free; 3) self-compliance; 4) self-rectification; 5) multiple resistance states; and 6) room-temperature process. The resistive switching and current rectification are attributed to oxygen vacancy migration in HfO2 and potential barrier modulation of the asymmetric TiO2/HfO2 tunnel barrier. The rectification ratio up to 10(3) is capable of realizing a single-crossbar array up to 16 Mb for future high-density storage class memory applications.
URI: http://dx.doi.org/10.1109/LED.2013.2264823
http://hdl.handle.net/11536/22603
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2264823
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 7
起始頁: 885
結束頁: 887
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