標題: Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
作者: Syu, Yong-En
Zhang, Rui
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Lou, Jen-Chung
Young, Tai-Fa
Chen, Jung-Hui
Chen, Min-Chen
Yang, Ya-Liang
Shih, Chih-Cheng
Chu, Tian-Jian
Chen, Jian-Yu
Pan, Chih-Hung
Su, Yu-Ting
Huang, Hui-Chun
Gan, Der-Shin
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Nonvolatile memory;resistance switching;tungsten silicon oxide (WSiOx)
公開日期: 1-七月-2013
摘要: Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
URI: http://dx.doi.org/10.1109/LED.2013.2260125
http://hdl.handle.net/11536/22602
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2260125
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 7
起始頁: 864
結束頁: 866
顯示於類別:期刊論文


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