標題: Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
作者: Tseng, Hsueh-Chih
Chang, Ting-Chang
Wu, Yi-Chun
Wu, Sei-Wei
Huang, Jheng-Jie
Chen, Yu-Ting
Yang, Jyun-Bao
Lin, Tzu-Ping
Sze, Simon. M.
Tsai, Ming-Jinn
Wang, Ying-Lang
Chu, Ann-Kuo
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Indium tin oxide (ITO);resistance switching;resistive random access memory (ReRAM);self-built current compliance
公開日期: 1-七月-2013
摘要: This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.
URI: http://dx.doi.org/10.1109/LED.2013.2259135
http://hdl.handle.net/11536/22601
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2259135
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 7
起始頁: 858
結束頁: 860
顯示於類別:期刊論文


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  1. 000323685700012.pdf