標題: SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICES
作者: SU, HP
LIU, HW
HONG, G
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1994
摘要: High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850-degrees-C for 30 min. Since the nitrides exhibit a better oxidation resistance to the low-pressure dry-oxygen than to the atmospheric-pressure dry-oxygen and wet-oxygen, the low pressure oxidation obtains a thinner oxidized nitride for the high-density dynamic-random-access-memories (DRAM's) and metal-oxide-nitride-oxide-semiconductor (MONO'S) memory devices. In addition, this dielectric possesses low leakage current and excellent time-dependent-dielectric-breakdown (TDDB) characteristics. Therefore, this novel recipe is promising for future ULSI technology.
URI: http://dx.doi.org/10.1109/55.334660
http://hdl.handle.net/11536/2260
ISSN: 0741-3106
DOI: 10.1109/55.334660
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 15
Issue: 11
起始頁: 440
結束頁: 442
顯示於類別:期刊論文


文件中的檔案:

  1. A1994PT32600002.pdf