標題: Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors
作者: Chou, Chia-Hsin
Lee, I-Che
Yang, Po-Yu
Hu, Ming-Jhe
Wang, Chao-Lung
Wu, Chun-Yu
Chien, Yun-Shan
Wang, Kuang-Yu
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 29-Jul-2013
摘要: Thin film transistors (TFTs) with amorphous silicon films crystallized via continuous-wave green laser at a wavelength of 532 nm exhibit very different electrical characteristics in various crystallization regions, corresponding to the Gaussian energy density distribution of the laser beam. In the center region subjected to the highest energy density, the full melting scheme led to the best crystallinity of the polycrystalline silicon film, resulting in the highest field-effect mobility of 500 cm(2) V-1 s(-1). In contrast, the edge region that resulted in solid phase crystallization exhibited the worst mobility of 48 cm 2 V-1 s(-1) for the polycrystalline silicon TFTs. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4812669
http://hdl.handle.net/11536/22597
ISSN: 0003-6951
DOI: 10.1063/1.4812669
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 5
結束頁: 
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