標題: Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
作者: Chen, Jui-Yuan
Hsin, Cheng-Lun
Huang, Chun-Wei
Chiu, Chung-Hua
Huang, Yu-Ting
Lin, Su-Jien
Wu, Wen-Wei
Chen, Lih-Juann
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: In situ TEM;RRAM;resistive switching;nanofilament;redox;unipolar
公開日期: 1-八月-2013
摘要: Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO1-x and ZnO.
URI: http://dx.doi.org/10.1021/nl4015638
http://hdl.handle.net/11536/22592
ISSN: 1530-6984
DOI: 10.1021/nl4015638
期刊: NANO LETTERS
Volume: 13
Issue: 8
起始頁: 3671
結束頁: 3677
顯示於類別:期刊論文


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