標題: A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
作者: Wu, Yin-Hao
Lee, Chuo-Han
Chu, Chung-Ming
Yeh, Yen-Hsien
Chen, Chan-Lin
Lee, Wei-I
電子物理學系
Department of Electrophysics
公開日期: 1-Aug-2013
摘要: A-plane GaN was grown on r-plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([(1) over bar 100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.52.08JB08
http://hdl.handle.net/11536/22578
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.08JB08
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 52
Issue: 8
結束頁: 
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