標題: Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
作者: Fu, Yi-Keng
Lu, Yu-Hsuan
Xuan, Rong
Chen, Jenn-Fang
Su, Yan-Kuin
電子物理學系
Department of Electrophysics
公開日期: 1-Aug-2013
摘要: The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.52.08JK05
http://hdl.handle.net/11536/22576
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.08JK05
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 52
Issue: 8
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000323883100133.pdf