標題: Low-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILC
作者: Chen, Yi-Hsuan
Yen, Li-Chen
Chang, Tien-Shun
Chiang, Tsung-Yu
Kuo, Po-Yi
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Metal-induced lateral crystallization (MILC);poly-Si thin-film transistor (poly-Si TFTs);tunneling field-effect-transistor (TFET)
公開日期: 1-八月-2013
摘要: It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, similar to 232 mV/decade, than the other T-TFTs and a high ON/OFF ratio > 10(6) at V-DS = 1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.
URI: http://dx.doi.org/10.1109/LED.2013.2266331
http://hdl.handle.net/11536/22572
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2266331
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 8
起始頁: 1017
結束頁: 1019
顯示於類別:期刊論文


文件中的檔案:

  1. 000323911800028.pdf