標題: Non-antireflective Scheme for Efficiency Enhancement of Cu(In,Ga)Se-2 Nanotip Array Solar Cells
作者: Liao, Yu-Kuang
Wang, Yi-Chung
Yen, Yu-Ting
Chen, Chia-Hsiang
Hsieh, Dan-Hua
Chen, Shih-Chen
Lee, Chia-Yu
Lai, Chih-Chung
Kuo, Wei-Chen
Juang, Jenh-Yi
Wu, Kaung-Hsiung
Cheng, Shun-Jen
Lai, Chih-Huang
Lai, Fang-I
Kuo, Shou-Yi
Kuo, Hao-Chung
Chueh, Yu-Lun
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: CIGS solar cell;direct sputtering;nanotip arrays;copper vacancy;Cd diffusion
公開日期: 1-八月-2013
摘要: We present systematic works in characterization of CIGS nanotip arrays (CIGS NTRs). CIGS NTRs are obtained by a one-step ion-milling process by a direct-sputtering process of CIGS thin films (CIGS TF) without a postselenization process. At the surface of CIGS NTRs, a region extending to 100 nm in depth with a lower copper concentration compared to that of CIGS TF has been discovered. After KCN washing, removal of secondary phases can be achieved and a layer with abundant copper vacancy (V-Cu) was left. Such compositional changes can be a benefit for a CIGS solar cell by promoting formation of Cd-occupied Cu sites (Cd-Cu) at the CdS/CIGS interface and creates a type-inversion layer to enhance interface passivation and carrier extraction. The raised V-Cu concentration and enhanced Cd diffusion in CIGS NTRs have been verified by energy dispersive spectrometry. Strengthened adhesion of Al:ZnO (AZO) thin film on CIGS NTRs capped with CdS has also been observed in SEM images and can explain the suppressed series resistance of the device with CIGS NTRs. Those improvements in electrical characteristics are the main factors for efficiency enhancement rather than antireflection.
URI: http://dx.doi.org/10.1021/nn402976b
http://hdl.handle.net/11536/22569
ISSN: 1936-0851
DOI: 10.1021/nn402976b
期刊: ACS NANO
Volume: 7
Issue: 8
起始頁: 7318
結束頁: 7329
顯示於類別:期刊論文


文件中的檔案:

  1. 000323810600098.pdf