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dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorZhang, Ruien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorLou, J. C.en_US
dc.contributor.authorChu, Tian-Jianen_US
dc.contributor.authorShih, Chih-Chengen_US
dc.contributor.authorPan, Jhih-Hongen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorTung, Cheng-Weien_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorWu, Jia-Jieen_US
dc.contributor.authorHu, Yingen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:31:55Z-
dc.date.available2014-12-08T15:31:55Z-
dc.date.issued2013-08-19en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4819162en_US
dc.identifier.urihttp://hdl.handle.net/11536/22547-
dc.description.abstractIn this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleElectrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid processen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4819162en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000323788100091-
dc.citation.woscount18-
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