標題: Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
作者: Chang, Kuan-Chang
Tsai, Tsung-Ming
Zhang, Rui
Chang, Ting-Chang
Chen, Kai-Huang
Chen, Jung-Hui
Young, Tai-Fa
Lou, J. C.
Chu, Tian-Jian
Shih, Chih-Cheng
Pan, Jhih-Hong
Su, Yu-Ting
Syu, Yong-En
Tung, Cheng-Wei
Chen, Min-Chen
Wu, Jia-Jie
Hu, Ying
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 19-Aug-2013
摘要: In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4819162
http://hdl.handle.net/11536/22547
ISSN: 0003-6951
DOI: 10.1063/1.4819162
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 8
結束頁: 
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