|標題:||Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process|
Lou, J. C.
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|摘要:||In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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